hkmgprocessflow

由CQin著作·2013·被引用1次—Inthispaper,aprocesschallengeofintegratingDualStressLiner.(DSL)(1)-(2)intogate-lastHigh-k/MetalGate(HKMG)flowis.,ProcessflowofNSFETconsideringHKMGwithgate-lastprocess.(a)and(b)AfterfinformationbasedonSi/SiGestack,(c)-(e)innerspacerandS/Depitaxy ...,GrapheneaFoundryqualifiesaHKMGprocessflowwithanEOTdownto5nm,anindustryfirst.FollowingthereleaseoftheGFETS30,GrapheneaFoun...

參考資訊如下
Last High

由 C Qin 著作 · 2013 · 被引用 1 次 — In this paper, a process challenge of integrating Dual Stress Liner. (DSL) (1)-(2) into gate-last High-k/Metal Gate (HKMG) flow is.

Process flow of NSFET considering HKMG with gate

Process flow of NSFET considering HKMG with gate-last process. (a) and (b) After fin formation based on Si/SiGe stack, (c)-(e) inner spacer and S/D epitaxy ...

Graphenea Foundry qualifies a HKMG process flow with an ...

Graphenea Foundry qualifies a HKMG process flow with an EOT down to 5nm, an industry first. Following the release of the GFET S30, Graphenea Foundry is pleased ...

Key Migration of Semiconductor CMOS Technology

2020年11月28日 — ... (Process Flow)改變，即從原先的Gate-first製程修改成Gate-last製程(如下圖)。但HKMG的手工藝技術又有細分為兩種，Intel在2009年發表了新的製程技術。

The fabrication process flow of pMOSFETs using HKMG

The fabrication process flow of pMOSFETs using HKMG-last integration scheme. Cross-sectional scanning electron microscopy images of fabricated pMOSFETs are also ...

SK hynix Leading the Way in the HKMG Revolution

2022年11月8日 — SK hynix pursued its platform development by differentiating the HKMG process integration into a form that is suitable for DRAM processes. In ...

High

The two common process flows to pattern the HKMG stack are gate-first and gate-last. The gate-first HKMG process is very sensitive, as the capping metal ...

CN104517902A

本发明涉及简化的先栅极HKMG制造流程，当依据先栅极HKMG方法形成场效应晶体管时，在硅化步骤以前必须移除形成于栅极电极的顶部上的覆盖层，从而导致在晶体管的栅极电极 ...